THE ELECTROLYTE-SILICON INTERFACE; ANODIC DISSOLUTION AND CARRIER, CONCENTRATION PROFILINGSHARPE CD; LILLEY P.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 9; PP. 1918-1922; BIBL. 10 REF.Article

THE DETERMINATION OF SURFACE STATE ENERGIES AT A SEMICONDUCTOR/ELECTROLYTE INTERFACE BY LAPLACE DOMAIN IMPEDANCE ANALYSISROSENTHAL J; WESTERBY B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2147-2148; BIBL. 10 REF.Article

ELECTRODE-LIMITED PHOTOINJECTION IN AQUEOUS ELECTRODE-ORGANIC CRYSTAL SYSTEMSGODLEWSKI J.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 499-507; ABS. RUS; BIBL. 23 REF.Article

SCANNING LIGHT-SPOT ANALYSIS OF THE CARRIER COLLECTION IN LIQUID-JUNCTION SOLAR ENERGY CONVERTERSFURTAK TE; CANFIELD DC; PARKINSON BA et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 6018-6021; BIBL. 14 REF.Article

A THEORETICAL TREATMENT OF CHARGE TRANSFER VIA SURFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE: ANALYSIS OF THE WATER PHOTOELECTROLYSIS PROCESSNISHIDA M.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1669-1675; BIBL. 37 REF.Article

P-N PHOTOELECTROLYSIS CELLS.NOZIK AJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 150-153; BIBL. 23 REF.Article

INTERFACES SEMI-CONDUCTEUR-ELECTROLYTE: CORRELATIONS ENTRE LE POTENTIEL DE BANDE PLATE ET LES ECHELLES D'ELECTRONEGATIVITEEL HALOUANI F; DESCHANVRES A.1982; MATER RES. BULL.; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 8; PP. 1045-1052; ABS. ENG; BIBL. 22 REF.Article

HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONSBOUDREAUX DS; WILLIAMS F; NOZIK AJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2158-2163; BIBL. 17 REF.Article

POTENTIAL DISTRIBUTION AT THE INTERFACE BETWEEN A P-TYPE SILICON ELECTRODE AND A 0.1 N HYDROFLUORIC ACID SOLUTION ELECTROLYTE UNDER POLARIZATION.KONOVA AA; ZHELEV KV; DUSHKOV AN et al.1976; BULG. J. PHYS.; BULG.; DA. 1976; VOL. 3; NO 1; PP. 63-68; ABS. RUSSE; BIBL. 3 REF.Article

A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT SEMICONDUCTOR-ELECTROLYTE INTERFACECHAZALVIEL JN; TRUONG TB.1980; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1980; VOL. 114; NO 2; PP. 299-303; BIBL. 15 REF.Article

OBSERVATION OF "INTRINSIC" SURFACE STATES AT THE TIO₂-AQUEOUS-ELECTROLYTE INTERFACE BY SUB-BAND-GAP ELECTROREFLECTANCE SPECTROSCOPYSIRIPALA W; TOMKIEWICZ M.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 6; PP. 443-446; BIBL. 16 REF.Article

SURFACE STATES AT SEMICONDUCTOR-LIQUID JUNCTIONKOBAYASHI K; AIKAWA Y; SUKIGARA M et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2526-2532; BIBL. 25 REF.Article

THE CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-ELECTROLYTE JUNCTION PHOTOVOLTAIC CELLSREICHMAN J.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 574-577; BIBL. 13 REF.Article

ELECTROLYTICAL DOPING OF SILICON WITH LITHIUMANTULA J.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2721-2722; BIBL. 6 REF.Article

SEMICONDUCTOR-ELECTROLYTE PHOTOVOLTAIC CELLS EMPLOYING CDSE AND CDTE.YOUNG GUICHAI; ANDERSON WW; ANDERSON LB et al.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 492-496; BIBL. 18 REF.Article

BESTIMMUNG VON IONENIMPLANTATIONSPROFILEN AUS DER MESSUNG DER DIFFERENTIELLEN KAPAZITAET AM HALBLEITER-ELEKTROLYT-KONTAKT.PHAM MINH TAN.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 2; PP. 439-444; ABS. ANGL.; BIBL. 13 REF.Article

PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN INP AND GAAS FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACESZURAWSKY WP; LITTMAN JE; DRICKAMER HG et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3216-3219; BIBL. 15 REF.Article

SURFACE STATES AT THE TIO₂/H₂O INTERFACE UNDER UV ILLUMINATIONKOBAYASHI K; TAKATA M; OKAMOTO S et al.1983; CHEMICAL PHYSICS LETTERS; ISSN 0009-2614; NLD; DA. 1983; VOL. 96; NO 3; PP. 366-370; BIBL. 20 REF.Article

SCHOTTKY BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTIONCHAZALVIEL JN.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 88; NO 1; PP. 204-220; BIBL. 30 REF.Article

DETERMINATION OF CARRIER CONCENTRATION FROM PHOTOELECTROLYSIS SPECTRA OF SEMICONDUCTING ELECTRODESSALVADOR P.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 1; PP. 1-4; BIBL. 12 REF.Article

AN ALTERNATIVE APPROACH TO CHARGE TRANSPORT IN SEMICONDUCTING ELECTRODESTHOMCHICK J; BUONCRISTIANI AM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6265-6272; BIBL. 17 REF.Article

Capacité différentielle du domaine de charge spatiale d'une électrode semi-conductrice en cas de dégénérescence volumique des principaux porteursLUNICHEV, V. N.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 137-139, issn 0424-8570Article

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfacesVAN MEIRHAEGHE, R. L; CARDON, F; GOMES, W. P et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 287-291, issn 0022-0728Article

Variations spectrales de la photocapacité de l'interface ZnO-électrolytePANOSYAN, ZH. R; POGOSYAN, A. A; MELIKSETYAN, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1866-1868, issn 0367-3294Article

A new model for the semiconductor-electrolyte interface and the origin of Mott-Schottky data dispersionBRAUN, C. M; FUJISHIMA, A; HONDA, K et al.Surface science. 1986, Vol 176, Num 1-2, pp 367-376, issn 0039-6028Article